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| SMD Type Silicon NPN Epitaxial Planar Type 2SC3547B SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Transition frequency is high and dependent on current excellently. 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IB IC PC Tj Tstg Rating 20 12 3 15 30 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Transition frequency Output capacitance Collector-base time constant Symbol ICBO IEBO V(BR) CEO hFE fT Cob Cc.rbb' Testconditons VCB =10 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 VCE = 10 V, IC = 5 mA VCE = 10 V, IC= 10 mA VCB = 10 V, IE =0, f =1 MHz VCB = 10 V, IC = 5 mA, f = 30 MHz 12 70 3 4 1.05 4.5 1.35 9 300 GHz pF ps Min Typ Max 0.1 1.0 Unit iA iA V Marking Marking HM +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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